| 摘要 |
<p>This semiconductor device includes: a substrate; and a plurality of thin-film diodes which are supported by the substrate and electrically connected in parallel with each other. The thin-film diodes include at least one thin-film diode of a first type ( 100A ), of which the semiconductor layer ( 10A ) has an N-type region ( 1A ), an intrinsic region ( 5A ), and a P-type region (3A) that are arranged in this order in a first direction X within a plane that is parallel to the substrate, and at least one thin-film diode of a second type ( 100B ), of which the semiconductor layer (10B) has a P-type region (3B) , an intrinsic region (5B), and an N-type region ( 1B ) that are arranged in this order in the first direction X . With such a configuration adopted, the variation in photocurrent characteristic between the thin-film diodes can be reduced.</p> |
