发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
To provide a method for manufacturing a semiconductor device having a heat-resistant resin film with flip-chip connection structure using a solder bump or a gold bump and an epoxy resin compound laminated thereon, in which adhesiveness is improved particularly after exposure to high temperature and high humidity environments for a long period of time, thereby enhancing the reliability of the semiconductor device. The method for manufacturing a semiconductor device having a heat-resistant resin film formed on a semiconductor element and an epoxy resin compound layer laminated thereon, comprises carrying out a plasma treatment on a surface of the heat-resistant resin film on which the epoxy resin compound layer is laminated using a nitrogen atom-containing gas containing at least one of nitrogen, ammonia, and hydrazine. |
申请公布号 |
EP1918987(A4) |
申请公布日期 |
2012.09.19 |
申请号 |
EP20060796608 |
申请日期 |
2006.08.22 |
申请人 |
HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. |
发明人 |
KOJIMA, YASUNORI;ITABASHI, TOSHIAKI |
分类号 |
H01L21/56;H01L21/02;H01L21/312;H01L23/31 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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