发明名称 |
Stackable chip with through electrodes, manufacturing method thereof, and infrared sensor |
摘要 |
A via hole is formed on a base substrate before a device circuit is formed, and thermal oxidation is performed to form a thermal oxidation layer on a surface of the base substrate on which the device circuit is formed and a surface in the via hole. The device circuit having a conductive section is formed on the base substrate after the thermal oxidation, and then, a conductive body is embedded in the via hole. |
申请公布号 |
EP2500935(A2) |
申请公布日期 |
2012.09.19 |
申请号 |
EP20120159644 |
申请日期 |
2012.03.15 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
YODA, TSUYOSHI;HASHIMOTO, NOBUAKI |
分类号 |
H01L23/31;H01L21/768;H01L23/48;H01L27/146;H01L31/0224 |
主分类号 |
H01L23/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|