发明名称 Stackable chip with through electrodes, manufacturing method thereof, and infrared sensor
摘要 A via hole is formed on a base substrate before a device circuit is formed, and thermal oxidation is performed to form a thermal oxidation layer on a surface of the base substrate on which the device circuit is formed and a surface in the via hole. The device circuit having a conductive section is formed on the base substrate after the thermal oxidation, and then, a conductive body is embedded in the via hole.
申请公布号 EP2500935(A2) 申请公布日期 2012.09.19
申请号 EP20120159644 申请日期 2012.03.15
申请人 SEIKO EPSON CORPORATION 发明人 YODA, TSUYOSHI;HASHIMOTO, NOBUAKI
分类号 H01L23/31;H01L21/768;H01L23/48;H01L27/146;H01L31/0224 主分类号 H01L23/31
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