METHOD FOR FORMING A GE ON III/V-ON-INSULATOR STRUCTURE

摘要

PURPOSE: A method for forming a Ge(germanium) structure on III/V on an insulator is provided to include a lower approach resistance source and a drain contact by forming high-mobility channel transistor. CONSTITUTION: A relaxed Ge layer(2) is grown on a donor substrate. One or more layers(3) of a III/V substance are grown on the Ge layer. A division surface(6) is formed in the Ge layer. A divided part of the donor substrate is moved to a supporting substrate(4). The divided part is a part of the donor substrate divided form the division surface including one or more layers of the III/V substance.