| 摘要 |
PURPOSE: A semiconductor light emitting device is provided to improve light extraction efficiency by concentrating light in a front direction of a light emitting device based on a diffraction phenomenon of an one-dimensional grating layer. CONSTITUTION: An N-type semiconductor layer(104) is formed on an upper part of a sapphire substrate. An active layer(106) is formed on an upper part of the N-type semiconductor layer. A P-type semiconductor layer(108) is formed on an upper part of the active layer. A transparent electrode layer(110) is formed on an upper part of the P-type semiconductor layer. A one-dimensional grating layer including plural one-dimensional lattices is formed on one or more surfaces of an upper surface of the sapphire substrate, a lower surface of the sapphire substrate, and an upper surface of the transparent electrode layer.
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