SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to control a trade-off property of recovery loss and an on-voltage by controlling the on-voltage through the impurity concentration of a P type anode layer. CONSTITUTION: An N type drift layer(1) is provided. A P type anode layer(2) is installed on the N type drift layer. A trench(3) penetrates the P type anode layer. A conductive substance(5) is embedded in the trench as an insulator film intervenes. An N type buffer layer(6) is installed between the N type drift layer and the P type anode layer and has higher impurity concentration than the N type drift layer's.