| 摘要 |
<p>PURPOSE: A resist pattern improving material, a resist pattern forming method, a semiconductor device manufacturing method, and a semiconductor device are provided to form fine resist patterns and to improve the line width roughness of the resist patterns. CONSTITUTION: A resist pattern improving material includes benzalconium chloride represented by chemical formula 1 and water. In chemical formula 1, n is the integer of 8 to 18. A resist pattern forming method includes the following: the resist pattern improving material is applied to cover the surfaces of patterned resist patterns based on exposure and development with respect to resist materials on a substrate to be treated. The applied material is heated, and a rinsing operation is implemented with water containing rinsing liquid.</p> |
