发明名称 |
Method and system for non-destructive distribution profiling of an element in a film |
摘要 |
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra. |
申请公布号 |
US8269167(B2) |
申请公布日期 |
2012.09.18 |
申请号 |
US201113021435 |
申请日期 |
2011.02.04 |
申请人 |
DECECCO PAOLA;SCHUELER BRUNO;REED DAVID;KWAN MICHAEL;BALLANCE DAVID STEPHEN;REVERA, INCORPORATED |
发明人 |
DECECCO PAOLA;SCHUELER BRUNO;REED DAVID;KWAN MICHAEL;BALLANCE DAVID STEPHEN |
分类号 |
H01J37/26 |
主分类号 |
H01J37/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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