发明名称 |
Photocatalytic implant having a sensor |
摘要 |
An implant comprises a photocatalytic layer on at least one surface and is adapted to act as a sensor. In some embodiments, the photocatalytic layer is a semiconductor oxide that is doped. According to some embodiments, the implant comprises a wave guide. According to some embodiments the implant comprises a light port. According to some embodiments, the implant comprises a reflective material on a surface of the waveguide. According to some embodiments the implant comprises a composite material comprising a first material that has a transmissivity when exposed to a predetermined wavelength of light and a second material that has photocatalytic activity when exposed to the predetermined wavelength of light. According to some embodiments the implant comprises a light source adapted to irradiate the photocatalytic surface. |
申请公布号 |
US8267883(B2) |
申请公布日期 |
2012.09.18 |
申请号 |
US20100817585 |
申请日期 |
2010.06.17 |
申请人 |
DIMAURO THOMAS M.;SUTTON JEFFREY K.;ATTAWIA MOHAMED;SERHAN HASSAN;MALONE JOHN DANIEL;BEARDSLEY TIMOTHY;DEPUY SPINE, INC. |
发明人 |
DIMAURO THOMAS M.;SUTTON JEFFREY K.;ATTAWIA MOHAMED;SERHAN HASSAN;MALONE JOHN DANIEL;BEARDSLEY TIMOTHY |
分类号 |
A61M5/00;A61F2/00;A61N1/30;A62B7/08 |
主分类号 |
A61M5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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