发明名称 Photocatalytic implant having a sensor
摘要 An implant comprises a photocatalytic layer on at least one surface and is adapted to act as a sensor. In some embodiments, the photocatalytic layer is a semiconductor oxide that is doped. According to some embodiments, the implant comprises a wave guide. According to some embodiments the implant comprises a light port. According to some embodiments, the implant comprises a reflective material on a surface of the waveguide. According to some embodiments the implant comprises a composite material comprising a first material that has a transmissivity when exposed to a predetermined wavelength of light and a second material that has photocatalytic activity when exposed to the predetermined wavelength of light. According to some embodiments the implant comprises a light source adapted to irradiate the photocatalytic surface.
申请公布号 US8267883(B2) 申请公布日期 2012.09.18
申请号 US20100817585 申请日期 2010.06.17
申请人 DIMAURO THOMAS M.;SUTTON JEFFREY K.;ATTAWIA MOHAMED;SERHAN HASSAN;MALONE JOHN DANIEL;BEARDSLEY TIMOTHY;DEPUY SPINE, INC. 发明人 DIMAURO THOMAS M.;SUTTON JEFFREY K.;ATTAWIA MOHAMED;SERHAN HASSAN;MALONE JOHN DANIEL;BEARDSLEY TIMOTHY
分类号 A61M5/00;A61F2/00;A61N1/30;A62B7/08 主分类号 A61M5/00
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