发明名称 |
Structure and method for thin film device |
摘要 |
Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.
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申请公布号 |
US8269221(B2) |
申请公布日期 |
2012.09.18 |
申请号 |
US20080011440 |
申请日期 |
2008.01.24 |
申请人 |
MEI PING;JEANS ALBERT;TAUSSIG CARL;HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
MEI PING;JEANS ALBERT;TAUSSIG CARL |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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