| 摘要 |
A gate electrode of a select gate transistor includes a gate insulating film that is formed on a semiconductor substrate, a lower gate electrode that is formed on the gate insulating film and that has a tapered portion in which a side surface on a side of a gate electrode of a memory cell transistor is in a tapered shape, a first oxide film, a silicon nitride film, a second oxide film, and a conductive film that are sequentially formed on the tapered portion, and an upper gate electrode that is connected to the conductive film and the lower gate electrode. |
