发明名称 Laser beam treatment device and semiconductor device
摘要 A laser beam treatment device capable of solving problem in a conventional technology that any uniform laser anneal cannot be realized since use of a galvano mirror changes the angle of incidence of the laser beam to the substrate and the reflected light from a back side of a transmissive substrate interferes with the reflected light from a surface of a semiconductor film or an interface between the semiconductor film and the substrate. Laser anneal is performed by using the laser beam treatment device comprising a laser, an optical system for shaping the laser beam oscillated from the laser, and a substrate holds to hold a work formed on the transmissive substrate, in which the substrate holder holds a liquid, and the liquid is brought into contact with the surface.
申请公布号 US8269136(B2) 申请公布日期 2012.09.18
申请号 US20040840338 申请日期 2004.05.07
申请人 TANAKA KOICHIRO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA KOICHIRO
分类号 B23K26/00;B23K26/10;B23K26/12;H01L21/20;H01L21/268;H01L21/324 主分类号 B23K26/00
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