发明名称 |
Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor |
摘要 |
Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
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申请公布号 |
US8269241(B2) |
申请公布日期 |
2012.09.18 |
申请号 |
US20090564458 |
申请日期 |
2009.09.22 |
申请人 |
SLATER, JR. DAVID B.;WILLIAMS BRADLEY E.;ANDREWS PETER S.;EDMOND JOHN A.;ALLEN SCOTT T.;CREE, INC. |
发明人 |
SLATER, JR. DAVID B.;WILLIAMS BRADLEY E.;ANDREWS PETER S.;EDMOND JOHN A.;ALLEN SCOTT T. |
分类号 |
H01L33/00;H01L33/20;H01L33/40;H01L33/44;H01L33/62 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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