发明名称 |
Circuit arrangement comprising a memory cell field and method for operation thereof |
摘要 |
A circuit arrangement comprises a memory cell array (2) with at least one memory circuit (99). The memory circuit (99) comprises one non-volatile memory cell (98) inserted in a first current path (106) between a supply voltage terminal (9) and a reference potential terminal (8), and a volatile memory cell (97) inserted in a second current path (107) between the supply voltage terminal (9) and the reference potential terminal (8). The volatile memory cell (97) is coupled to the non-volatile memory cell (98) for reading the non-volatile memory cell (98). |
申请公布号 |
US8270192(B2) |
申请公布日期 |
2012.09.18 |
申请号 |
US20070515196 |
申请日期 |
2007.11.14 |
申请人 |
BOESMUELLER PETER;FELLNER JOHANNES;AUSTRIAMICROSYSTEMS AG |
发明人 |
BOESMUELLER PETER;FELLNER JOHANNES |
分类号 |
G11C5/02 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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