SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve luminous efficiency by minimizing stress applied to a semiconductor layer on a heterogeneous substrate. CONSTITUTION: An AlxInyGa1-x-yN layer(102) is formed on a substrate(101). A first conductive semiconductor layer(103) is formed on the AlxInyGa1-x-yN layer. An active layer(104) is formed on the first conductive semiconductor layer. A second conductive semiconductor layer(105) is formed on the active layer. An ohmic electrode layer(106) is formed on the second conductive semiconductor layer. A second electrode(107b) is formed on the ohmic electrode layer.