发明名称 |
Method of manufacturing semiconductor device, and semiconductor device |
摘要 |
There are provided a method of manufacturing a semiconductor device which achieves a reduction in implantation masks, and such a semiconductor device. By implanting boron into NMOS regions using a resist mask and another resist mask as the implantation masks, p-type impurity regions serving as the halo regions of access transistors and drive transistors are formed. By further implanting phosphorus or arsenic into a PMOS region using another resist mask as the implantation mask, n-type impurity regions serving as the halo regions of load transistors are formed. |
申请公布号 |
US8269284(B2) |
申请公布日期 |
2012.09.18 |
申请号 |
US201113019600 |
申请日期 |
2011.02.02 |
申请人 |
NIL KOJI;IGARASHI MOTOSHIGE;RENESAS ELECTRONICS CORPORATION |
发明人 |
NIL KOJI;IGARASHI MOTOSHIGE |
分类号 |
H01L27/088;H01L21/8234 |
主分类号 |
H01L27/088 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|