METHOD OF FABRICATING THE SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor memory device is provided to remove a cell open photo process to expose a buried contact layer in a cell array region by exposing the buried contact layer in the cell array region using an etching process. CONSTITUTION: A semiconductor substrate(110) with a bottom layer(120) is prepared. An insulation layer is formed on the bottom layer. A core/peri signal transmission conductive layer(140) is formed on the insulation layer of the core/peri region. A capping insulation layer is formed on the insulation layer and the core/peri signal transmission conductive layer. The capping insulation layer is etched to expose the bottom layer in the cell array region. A stopper layer(132) is formed on the front side of the core/peri region and the bottom layer. [Reference numerals] (AA) Cell region; (BB) Core/Peri region