发明名称 Nonvolatile memory device and method of programming the same
摘要 In a nonvolatile memory device, a cache program operation for the next data is performed in a first latch, and a verification program operation for the current data is performed using a second latch. Thus, data collision can be avoided and execution time can be reduced.
申请公布号 US8270215(B2) 申请公布日期 2012.09.18
申请号 US20100826064 申请日期 2010.06.29
申请人 YOU BYOUNG SUNG;PARK JIN SU;PARK SEONG JE;HYNIX SEMICONDUCTOR INC. 发明人 YOU BYOUNG SUNG;PARK JIN SU;PARK SEONG JE
分类号 G11C11/34 主分类号 G11C11/34
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