| 摘要 |
<p>The present invention is to provide a manufacturing method capable of reducing costs of back-contact solar cell by realizing high-precision pattern application with a smaller process number. Specifically, it is a method for manufacturing a semiconductor device, being characterized in that a p-type region and/or n-type pattern is formed on a surface of a semiconductor substrate, including a step of ejecting at least one of etching paste, masking paste, doping paste, and electrode paste from an ejecting orifice of a nozzle toward the surface of the semiconductor substrate to form beads formed of the paste between the semiconductor substrate and the ejecting orifice and of moving the semiconductor substrate relative to the nozzle thereby the paste is applied to the surface of the semiconductor substrate in a stripe shape.</p> |
