SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to simultaneously form a resistance element in which film thickness is thin and a capacitive element in which the film thickness is thick by the level difference of an element isolation region. CONSTITUTION: An element isolation region(2) is formed on a semiconductor substrate(1). A source region and a drain region(5) are formed on the semiconductor substrate by diffusing impurities of a second conductive type of high concentration within a well region(4). A gate electrode(7) is formed on the surface of the semiconductor substrate in which the source region and the drain region are formed through a gate oxidation film(6). A top electrode(10) is formed on a bottom electrode through a capacity insulating film(9). A resistance unit(11) is formed on the element isolation region.