Oxide semiconductor target

摘要

A method of forming an oxide semiconductor layer includes: mounting an oxide semiconductor target in a chamber; loading a substrate into the chamber; vacuuming the chamber; applying a direct current power to the oxide semiconductor target while injecting oxygen and a sputtering gas into the chamber; and forming an oxide semiconductor layer on a surface of the substrate by applying plasma of the sputtering gas onto the oxide semiconductor target. Here, the oxide semiconductor target has a resistance of 1 k&OHgr; or less.