发明名称 Method of cleaning and forming a negatively charged passivation layer over a doped region
摘要 The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.
申请公布号 US8268728(B2) 申请公布日期 2012.09.18
申请号 US201113196532 申请日期 2011.08.02
申请人 STEWART MICHAEL P.;ZHOU LISONG;SHU JEN;XU LI (SHERRY);APPLIED MATERIALS, INC. 发明人 STEWART MICHAEL P.;ZHOU LISONG;SHU JEN;XU LI (SHERRY)
分类号 H01L21/302 主分类号 H01L21/302
代理机构 代理人
主权项
地址