发明名称 |
Method of producing zinc oxide semiconductor crystal |
摘要 |
A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on the substrate, wherein a total or partial portion of the zinc is ionized in a vacuum atmosphere of 1×10−4 Torr or less and is introduced to the surface of the substrate to grow the ZnO based semiconductor crystal. As a result, it is possible to provide a method of producing a zinc oxide based semiconductor crystal capable of growing a zinc oxide semiconductor crystal having excellent surface flatness and crystallinity and including an extremely small amount of impurities at a high growth rate. |
申请公布号 |
US8268075(B2) |
申请公布日期 |
2012.09.18 |
申请号 |
US20070305802 |
申请日期 |
2007.06.22 |
申请人 |
OMICHI KOJI;KAIFUCHI YOSHIKAZU;FUJIMAKI MUNEHISA;YOSHIKAWA AKIHIKO;FUJIKURA LTD.;CHIBA UNIVERSITY |
发明人 |
OMICHI KOJI;KAIFUCHI YOSHIKAZU;FUJIMAKI MUNEHISA;YOSHIKAWA AKIHIKO |
分类号 |
C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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