| 摘要 |
A process of sealing a semiconductor substrate by contacting the semiconductor substrate with a surface of a release layer (I) of a gas barrier release film that is in the form of a mold, which includes vacuum suction; injecting a sealing resin between the semiconductor substrate and the mold; and releasing said mold from said semiconductor substrate having said sealing resin present thereon, where the gas barrier release film has a release layer (I), which has excellent releasability; a plastic support layer (II) supporting the release layer; and a metal or a metal oxide gas restraint layer (III), present between the release layer and the support layer, where the gas barrier release film exhibits a xylene gas permeability of at most 5�10−15 (kmol m/(s�m2�kPa)) at 170� C., and a surface of said release layer (I) has an arithmetic surface roughness of from 0.15 to 3.5μm, exhibiting a satin-finish. |
