发明名称 Method for producing a thin film transistor
摘要 A method for producing a thin film transistor includes providing a glass substrate; disposing a positive photosensitive coating on the glass substrate; providing a transparent molding plate having a plurality of ladder opaque protrusions that are arranged in accordance with a predetermined pattern and that have at least two different depths; pressing the transparent molding plate into the positive photosensitive coating without contacting the glass substrate; exposing a part of the positive photosensitive coating which is unshielded under the ladder opaque protrusions, with a UV light; separating the transparent molding plate from the glass substrate after the step of exposing; and removing the part of the positive photosensitive coating, which is unshielded under the ladder opaque protrusions and not cured, using a chemical solvent, whereby the thin film transistor is formed in a pattern having more than two different depths.
申请公布号 US8268538(B2) 申请公布日期 2012.09.18
申请号 US20090353345 申请日期 2009.01.14
申请人 CHOU LIN-EN;TSAI CHIA-HAO;WANG WEN-TUNG;TAIWAN TFT LCD ASSOCIATION;CHUNGHWA PICTURE TUBES, LTD.;AU OPTRONICS CORP.;HANNSTAR DISPLAY CORP.;CHI MEI OPTOELECTRONICS CORP.;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;TOPPOLY OPTOELECTRONICS CORP. 发明人 CHOU LIN-EN;TSAI CHIA-HAO;WANG WEN-TUNG
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项
地址