发明名称 |
Method for producing a thin film transistor |
摘要 |
A method for producing a thin film transistor includes providing a glass substrate; disposing a positive photosensitive coating on the glass substrate; providing a transparent molding plate having a plurality of ladder opaque protrusions that are arranged in accordance with a predetermined pattern and that have at least two different depths; pressing the transparent molding plate into the positive photosensitive coating without contacting the glass substrate; exposing a part of the positive photosensitive coating which is unshielded under the ladder opaque protrusions, with a UV light; separating the transparent molding plate from the glass substrate after the step of exposing; and removing the part of the positive photosensitive coating, which is unshielded under the ladder opaque protrusions and not cured, using a chemical solvent, whereby the thin film transistor is formed in a pattern having more than two different depths. |
申请公布号 |
US8268538(B2) |
申请公布日期 |
2012.09.18 |
申请号 |
US20090353345 |
申请日期 |
2009.01.14 |
申请人 |
CHOU LIN-EN;TSAI CHIA-HAO;WANG WEN-TUNG;TAIWAN TFT LCD ASSOCIATION;CHUNGHWA PICTURE TUBES, LTD.;AU OPTRONICS CORP.;HANNSTAR DISPLAY CORP.;CHI MEI OPTOELECTRONICS CORP.;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;TOPPOLY OPTOELECTRONICS CORP. |
发明人 |
CHOU LIN-EN;TSAI CHIA-HAO;WANG WEN-TUNG |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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