发明名称 MEMORY ELEMENT AND SIGNAL PROCESSING CIRCUIT
摘要 PURPOSE: A memory device and a signal processing circuit are provided to reduce power consumption by maintaining data after a power voltage supply is stopped. CONSTITUTION: A memory device(100) includes a first circuit and a second circuit. The first circuit includes a first transistor(101a) and a second transistor(102a). The second circuit includes a third transistor(101b) and a fourth transistor(102b). A signal potential corresponding to a first signal is inputted to a gate of the second transistor via the first transistor in an on state. A signal potential corresponding to the second signal is inputted to a gate of the fourth transistor via the third transistor in the on state. The first signal is read using the status of the second transistor and the fourth transistor.
申请公布号 KR20120102542(A) 申请公布日期 2012.09.18
申请号 KR20120023449 申请日期 2012.03.07
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ENDO MASAMI
分类号 G11C7/10;G06F1/00;G11C7/06 主分类号 G11C7/10
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