发明名称 |
MEMORY ELEMENT AND SIGNAL PROCESSING CIRCUIT |
摘要 |
PURPOSE: A memory device and a signal processing circuit are provided to reduce power consumption by maintaining data after a power voltage supply is stopped. CONSTITUTION: A memory device(100) includes a first circuit and a second circuit. The first circuit includes a first transistor(101a) and a second transistor(102a). The second circuit includes a third transistor(101b) and a fourth transistor(102b). A signal potential corresponding to a first signal is inputted to a gate of the second transistor via the first transistor in an on state. A signal potential corresponding to the second signal is inputted to a gate of the fourth transistor via the third transistor in the on state. The first signal is read using the status of the second transistor and the fourth transistor. |
申请公布号 |
KR20120102542(A) |
申请公布日期 |
2012.09.18 |
申请号 |
KR20120023449 |
申请日期 |
2012.03.07 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ENDO MASAMI |
分类号 |
G11C7/10;G06F1/00;G11C7/06 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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