METHOD FOR INCREASING A SACRIFICIAL LAYER ETCHING RATE AND DEVICE FORMED THEREOF
摘要
The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.
申请公布号
WO2012097234(A3)
申请公布日期
2012.09.13
申请号
WO2012US21218
申请日期
2012.01.13
申请人
CAVENDISH KINETICS, INC;RENAULT, MICKAEL;LACEY, JOSEPH DAMIAN GORDON;JOSHI, VIKRAM;MAGUIRE, THOMAS L.
发明人
RENAULT, MICKAEL;LACEY, JOSEPH DAMIAN GORDON;JOSHI, VIKRAM;MAGUIRE, THOMAS L.