| 摘要 |
<p>PURPOSE: A verification method based on a photomask model is provided to efficiently manage a capacity required for library storage by using a library which stores the presence of defects of a pattern formed on a wafer. CONSTITUTION: MBV(Model Based Verification) is performed with respect to a first mask(S100). A pattern by transferring the pattern with possible defects on a wafer is inspected(S200). A result inspecting the pattern formed by being transferred on the wafer is saved in a library(S300). Model base verification is performed for a second mask by using the library(S400). The model base verification is performed for the second mask(S500,S600). A pattern formed by transferring the pattern with possible defects of the second mask on the wafer is inspected(S800). The result inspecting the pattern formed by being transferred on the wafer is saved in the library(S900). [Reference numerals] (AA) Start; (BB) Not storing in a library; (CC) Generation of storing errors in the library; (DD) Not generation of storing errors in the library; (EE) End; (S100) First mask MBV; (S1000) Storing in the library; (S200) Pattern inspection; (S300) Storing inspection results in the library; (S400) Second mask MBV; (S500) Is a detected pattern stored in the library? Are errors generated due to wafer transfer?; (S600) Continuous MBV operation; (S700,S800) Outputting a pattern which can generate errors; (S900) Pattern inspection</p> |
