The present invention is a silicon single crystal wafer cut from a silicon single crystal ingot grown by the Czochralski method, wherein the silicon single crystal wafer is characterized by being cut from a silicon single crystal ingot with an oxygen concentration of 8x1017 atoms/cm3 (ASTM'79) or less, FPD and LEP not being detected by selective etching, and containing a defect area in which LSTD is detected by an infrared scattering method. According to the invention, a wafer is provided at low cost which does not cause pressure resistance failure or leakage failure when manufacturing a device and which has a low oxygen concentration.
