STRAINED GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

A strained Ge-on-insulator structure is provided, comprising: a silicon substrate (1100), in which an oxide insulating layer (1200) is formed on a surface of the silicon substrate (1100); a Ge layer (1300) formed on the oxide insulating layer (1200), in which a first passivation layer (1400) is formed between the Ge layer (1300) and the oxide insulating layer (1200); a gate stack (1600, 1700) formed on the Ge layer (1300); and a channel region formed below the gate stack (1600, 1700), and a source (1800) and a drain (1800) formed on sides of the channel region, in which the source (1800) and the drain (1800) are a Si x Ge -x :C source and a Si x Ge -x :C drain respectively to produce a tensile 10 strain in the channel region, in which x is within a range from 0 to 1 and a content of C is within a range from 0 to 7.5%. Further, a method for forming the strained Ge-on-insulator structure is also provided.