发明名称 POWER SEMICONDUCTOR MODULE, MANUFACTURING METHOD OF THE POWER SEMICONDUCTOR MODULE, AND ELECTRIC POWER CONVERSION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To prevent cracks and peeling in a connection member connecting a circuit body with a case in a power semiconductor module where the circuit body including a power semiconductor element is mounted in the case. <P>SOLUTION: A power semiconductor module includes: a circuit body having a power semiconductor element and a conductor member connecting with the power semiconductor element; a bag-shaped housing member housing the circuit body; and a connection member connecting the circuit body with the housing member. In the power semiconductor module, the housing member includes: a first heat radiation member and a second heat radiation member that are disposed facing each other so as to sandwich and hold the circuit body; a side wall connecting the first heat radiation member with the second heat radiation member; and an intermediate member formed around the first heat radiation member and connecting with the side wall, and the intermediate member is curved so as to protrude toward a housing space of the housing member. This structure reduces residual stress occurring in the connection member. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012178484(A) 申请公布日期 2012.09.13
申请号 JP20110041112 申请日期 2011.02.28
申请人 HITACHI AUTOMOTIVE SYSTEMS LTD 发明人 HIRAMITSU SHINJI;KOSHIZAKA ATSUSHI;HIGUMA MASATO;TOKUDA KOJI;KAWAHARA KEIJI
分类号 H01L25/07;H01L25/18;H02M7/48 主分类号 H01L25/07
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