发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a technique that achieves a spiral inductor that does not reduce the degree of freedom of mounting. <P>SOLUTION: A semiconductor device 100 comprises: a first semiconductor substrate 1 and a second semiconductor substrate 2 that are disposed in substantially parallel; a plurality of first patterns 3 that are formed on a first opposed surface 1a of the first semiconductor substrate 1 opposite to the second semiconductor substrate 2 and are substantially parallel to one another; a plurality of second patterns 4 that are formed on a second opposed surface 2a of the second semiconductor substrate 2 opposite to the first semiconductor substrate 1 and are substantially parallel to one another; and a plurality of bump electrodes 5 forming a spiral inductor L by alternately conducting the plurality of first patterns 3 and the plurality of second patterns 4. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012178391(A) 申请公布日期 2012.09.13
申请号 JP20110039310 申请日期 2011.02.25
申请人 RENESAS ELECTRONICS CORP 发明人 MATSUNOSHITA MAKOTO
分类号 H01L21/822;H01F17/00;H01F41/04;H01L25/065;H01L25/07;H01L25/18;H01L27/04 主分类号 H01L21/822
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