发明名称 |
METHOD OF FABRICATING AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME |
摘要 |
A method of fabricating a semiconductor memory device includes preparing a semiconductor substrate which is divided into a cell array region and a core and peripheral region adjacent to the cell array region. Signal lines may be formed in a lower layer in a cell region. An insulation layer may be formed on the lower layer. Signal lines connected to cell region signal lines may be formed on an insulation layer of the peripheral region. A capping layer may be formed on the insulation layer and the core and peripheral signal lines. The capping layer may be etched to expose the lower layer of the cell array region and an etch stop may be formed on the lower layer and the core and peripheral region.
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申请公布号 |
US2012231619(A1) |
申请公布日期 |
2012.09.13 |
申请号 |
US201213414262 |
申请日期 |
2012.03.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK WON-MO;HWANG MIN-WK;KIM HYUN-CHUL |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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