| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a metalalkoxide compound which has a low melting point, high vapor pressure and superior thermal stability and is suitable for production of a metal-containing thin film by the CVD/ALD method. <P>SOLUTION: An alkylcyclopentadiene compound, wherein a content of materials and the by-product derived from the materials is ≤5% and a content of the by-product derived from a target substance is ≤3%, is represented by general formula (1). In the formula: R is a 1-4C alkyl group; and any hydrogen atom in the cyclopentadiene ring may be substituted by a 1-4C alkyl group. <P>COPYRIGHT: (C)2012,JPO&INPIT |
