| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element having a large MR change rate, and to provide a magnetic head assembly, a magnetic recorder/reproducer, and a memory cell array using the same, and a manufacturing method of a magnetoresistance effect element. <P>SOLUTION: The magnetoresistance effect element includes a first electrode, a first magnetic layer, a second magnetic layer, a spacer layer, an oxide layer containing at least one element selected from Zn, In, Sn, and Cd, and at least one element selected from Fe, Co, and Ni, and a metal layer provided in contact with the oxide layer and containing at least one element selected from Zn, In, Sn, and Cd at a concentration of 0.5-80 at%, and at least one element selected from Fe, Co, and Ni. <P>COPYRIGHT: (C)2012,JPO&INPIT |
