发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND SUBSTRATE HOLDING JIG
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit warpage of a substrate generated after curing a resin layer disposed on one surface of a substrate or after forming a conductor layer on one surface of the substrate. <P>SOLUTION: A semiconductor manufacturing method comprises at least a first process of holding a substrate W of a wafer-like semiconductor, in a warped state, on which a resin layer R1 is disposed on one surface Wa in such a manner that the whole region of the surface Wa is spherically swollen and a second process of curing the resin layer R1 after performing the first process. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012178422(A) 申请公布日期 2012.09.13
申请号 JP20110040035 申请日期 2011.02.25
申请人 FUJIKURA LTD 发明人 ITO TOSHIHIKO
分类号 H01L23/12;H01L21/683 主分类号 H01L23/12
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