发明名称 METHOD FOR MANUFACTURING A SUBSTRATE INCLUDING ORGANISED METAL ISLANDS
摘要 The invention relates to a method for manufacturing a substrate including organised islands consisting of a metal such as Ni, Pt, Ir, or Pd, suitable for the controlled growth of nanowires/nanotubes, said method including the following steps: forming a layer of the metal on an exposed top surface of silicon; carrying out annealing in order to completely convert the metal layer into a layer of a silicide of said metal; exposing the top surface to a low-temperature oxygen plasma in order to form an oxysilicide of the metal; and exposing the top surface to a low-temperature hydrogen plasma, which results in obtaining grains of the metal in a silicon oxide layer.
申请公布号 WO2012038671(A3) 申请公布日期 2012.09.13
申请号 WO2011FR52210 申请日期 2011.09.23
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;MADAR, ROLAND;CHENEVIER, BERNARD 发明人 MADAR, ROLAND;CHENEVIER, BERNARD
分类号 H01L51/00;C01B31/02;H01L21/04 主分类号 H01L51/00
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