发明名称 |
METHOD FOR MANUFACTURING A SUBSTRATE INCLUDING ORGANISED METAL ISLANDS |
摘要 |
The invention relates to a method for manufacturing a substrate including organised islands consisting of a metal such as Ni, Pt, Ir, or Pd, suitable for the controlled growth of nanowires/nanotubes, said method including the following steps: forming a layer of the metal on an exposed top surface of silicon; carrying out annealing in order to completely convert the metal layer into a layer of a silicide of said metal; exposing the top surface to a low-temperature oxygen plasma in order to form an oxysilicide of the metal; and exposing the top surface to a low-temperature hydrogen plasma, which results in obtaining grains of the metal in a silicon oxide layer. |
申请公布号 |
WO2012038671(A3) |
申请公布日期 |
2012.09.13 |
申请号 |
WO2011FR52210 |
申请日期 |
2011.09.23 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;MADAR, ROLAND;CHENEVIER, BERNARD |
发明人 |
MADAR, ROLAND;CHENEVIER, BERNARD |
分类号 |
H01L51/00;C01B31/02;H01L21/04 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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