| 摘要 |
A system for measuring thin film stress (anisotropic or isotropic), such as from thin film deposition onto semiconductor substrates found in semiconductor manufacturing. The system uses resettled volume difference (V2−V1) of the surface of a material to calculate stress. The system includes A) A means to collect 3D surface point positions of a body by reflecting an image or light from the material surface into a sensor. B) A method to calculate volume from 3D surface points. C) A method to calculate thin film stress from resettled volume difference (V2−V1). D) A 3D Integrated Magnification Environment (3D-IME) to analyze 3D models of a body with a single axis (the height axis) magnified in an effort to observe the effects of stress on the body, before and after stress is applied, such as from film deposition). Calculating stress from resettled volume difference (V2−V1) eliminates the inaccuracy of calculating stress from the change in surface curvature or radius ( 1 R 2 - 1 R 1 ) , caused by the non-spherical deformation of anisotropic materials, such as semiconductor substrates (eg: silicon wafers) in semiconductor manufacturing. |
