发明名称 PHASE CHANGE MEMORY
摘要 A phase change memory with an operating current that can be gradually increased or gradually decreased. The phase change memory has a phase change storage element, a transistor, and a control circuit. The transistor is operable to adjust the operating current flowing through the phase change storage element. The transistor has a first terminal coupled to a voltage source, a second terminal coupled to the phase change storage element, and a control terminal receiving a control signal from the control circuit. The control circuit is specially designed to limit the transistor in a linear region.
申请公布号 US2012230099(A1) 申请公布日期 2012.09.13
申请号 US201213477884 申请日期 2012.05.22
申请人 SHEU SHYH-SHYUAN;CHINAG PEI-CHIA;LIN WEN-PIN;HIGGS OPL. CAPITOL LLC 发明人 SHEU SHYH-SHYUAN;CHINAG PEI-CHIA;LIN WEN-PIN
分类号 G11C11/46 主分类号 G11C11/46
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