SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve reliability and accuracy of a process by forming a metal layer on a lower portion of a glass wafer in an initial step of the process. CONSTITUTION: A semiconductor substrate(110) comprises an upper side(111) and a lower side(112). A metal layer(120) is formed on a lower portion of the semiconductor substrate. A first dielectric layer(130) is formed on a passivation layer(114) into a predetermined thickness. A second dielectric layer(150) is formed on the first dielectric layer into the predetermined thickness. An UBM layer(160) is formed on a land(141) exposed through a second opening(151) of the second dielectric layer.