COMPOUND SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR SUBSTRATE, AND LIGHT-EMITTING ELEMENT

摘要

The present invention is a compound semiconductor substrate having at least: an n-type cladding layer comprising (AlxGa1-x)yIn1-y on an n-type GaP window layer; and a quaternary light-emitting layer wherein an active layer and a p-type cladding layer are sequentially laminated. A p-type GaP layer, which is a current diffusion layer, is laminated on the quaternary light-emitting layer on the primary surface (first primary surface) at the reverse side of the primary surface (second primary surface) on the n-type GaP window layer side. The compound semiconductor substrate is characterized by an impurity diffusion suppression layer comprising (Alx"Ga1-x")y"In1-y"P (where 0 < x" < x < 1 and 0 < y" < 1) having a lower Al content than the n-type cladding layer being formed between the n-type GaP window layer and the quaternary light-emitting layer. As a result, provided is a compound semiconductor substrate able to suppress deterioration of use life characteristics with respect to forward voltage by means of suppressing an increase in forward voltage when impurities such as oxygen and carbon arise and are electrified at the join interface between the quaternary light-emitting layer and a GaP substrate.