| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device with high reliability and high pressure resistance by forming a buffer layer with high resistance for complete suppression of off-leak current while retaining the crystal quality of a compound semiconductor of an upper layer without doping impurities with high resistance during crystal growth of the buffer layer. <P>SOLUTION: At least one type selected from impurities, for example, Fe, C, B, Ti, Cr is introduced into at least a buffer layer 2a of a compound semiconductor layer structure 2 from the rear face of the compound semiconductor layer structure 2 to increase the resistance value of the buffer layer 2a. <P>COPYRIGHT: (C)2012,JPO&INPIT |
