发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a wiring board and a semiconductor device with a small and highly functional circuit that has achieved multilayer wiring with fewer steps, and provide a semiconductor device in which such a highly functional circuit is formed integrally with a display device on the same substrate. <P>SOLUTION: A semiconductor device includes a first wire, a second wire, a third wire, a first interlayer insulation film, a second interlayer insulation film, a first contact hole, and a second contact hole on a substrate with an insulation surface. The width of the second wire is larger than the width of the first wire; alternatively, the width of the third wire is larger than the width of the first wire or the width of the second wire. Moreover, the diameter of the second contact hole is larger than the diameter of the first contact hole. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012178575(A) 申请公布日期 2012.09.13
申请号 JP20120087015 申请日期 2012.04.06
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KUROKAWA YOSHIMOTO
分类号 H01L29/786;G03F7/20;H01L21/027;H01L21/4763;H01L21/48;H01L21/60;H01L21/768;H01L21/77;H01L21/82;H01L21/8242;H01L21/8244;H01L23/14;H01L23/48;H01L23/482;H01L27/10;H01L27/108;H01L27/11;H01L27/12;H05K1/00;H05K3/46 主分类号 H01L29/786
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