发明名称 CURRENT MIRROR CIRCUIT AND SEMICONDUCTOR DEVICE USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a current mirror circuit that ensures a wide output voltage range even upon a process variation. <P>SOLUTION: The low voltage cascode current mirror circuit includes N-channel MOS transistors Q1-Q5 and a resistive element 1. An overdrive voltage Vov_Q3 of the transistor Q3 is equal to the sum of overdrive voltages Vov_Q4, Vov_Q5 of the transistors Q4, Q5. The product of a constant current Ic and a resistance value R1 of the resistive element 1 is a saturation margin Vdsm_Q5 of the transistor Q5. Even upon a process variation, the saturation margin Vdsm_Q5 of the transistor Q5 thus remains unchanged. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012178638(A) 申请公布日期 2012.09.13
申请号 JP20110039361 申请日期 2011.02.25
申请人 RENESAS ELECTRONICS CORP 发明人 FURUSAWA KENJI;SUZUKI HIROTO;UCHIDA NAOKO;KUMAMOTO TOSHIO;FUKAZAWA TERUYA
分类号 H03F3/343;H03F1/22 主分类号 H03F3/343
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