| 摘要 |
<P>PROBLEM TO BE SOLVED: To facilitate securing of a handling electric charge amount in a horizontal transfer register, to improve the transfer efficiency, and to achieve cost reduction and power consumption reduction with ease, in a solid-state imaging element. <P>SOLUTION: A solid-state imaging element 1 has: light receiving elements 3 arranged in a matrix in an imaging region 2 on a semiconductor substrate; a vertical transfer register 4 transferring signal charges generated by the light receiving elements 3 in a vertical direction; a horizontal transfer register 5 transferring the signal charges transferred by the vertical transfer register 4 in a horizontal direction; and a gate insulating film 13 provided under transfer electrodes 11 and 12 configuring the respective transfer registers 4 and 5 on the semiconductor substrate 10. The gate insulating film 13 includes: an under-vertical transfer electrode film part 13A located under the vertical transfer electrode 11 configuring the vertical transfer register 4, and having a first film thickness (d1); and an under-horizontal transfer electrode film part 13B located under the horizontal transfer electrode 12 configuring the horizontal transfer register 5, and having a second film thickness (d2) thinner than the first film thickness (d1). <P>COPYRIGHT: (C)2012,JPO&INPIT |
