发明名称 GRAPHENE FORMATION
摘要 Technologies are generally described for forming graphene and structures including graphene. In an example, a system effective to form graphene may include a source of carbon atoms and a reaction chamber configured in communication with the source of carbon atoms. The reaction chamber may include a first and second layer of a host material. The host material may include a crystalline compound with a layer structure with a layer spacing in a range from about 1.5 Å to about 33 Å. The reaction chamber may be adapted effective to move at least six carbon atoms from the source into the reaction chamber. The reaction chamber may be configured effective to move the at least six carbon atoms in between the first and the second layer. The reaction chamber may be adapted effective to react the carbon atoms under reaction conditions sufficient to form the graphene.
申请公布号 US2012228556(A1) 申请公布日期 2012.09.13
申请号 US201113147266 申请日期 2011.03.09
申请人 ROUNDHILL DAVID MAX;EMPIRE TECHNOLOGY DEVELOPMENT LLC 发明人 ROUNDHILL DAVID MAX
分类号 H01B1/04;B01J19/00;B01J19/10;B82B1/00;B82B3/00;C01B31/00;C01B31/04 主分类号 H01B1/04
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