| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with which a semiconductor component is disposed within a semiconductor component recess provided on an upper surface side of a cavity, and which can be reduced in thickness. <P>SOLUTION: Inside a semiconductor component recess 4 which is provided on an upper surface side of a cavity 1, a semiconductor component 11 is disposed in a face-down manner. Inside the semiconductor component recess 4, an insulating layer 35 is provided so as to cover the semiconductor component 11. An upper surface of the insulating layer 35 becomes flush with an upper surface of an upper overcoat film 33 provided on the upper surface of the cavity 1. Upper layer wiring 37 is provided on the upper surfaces of the insulating layer 35 and the upper overcoat film 33. In such a case, no upper insulating film is provided on the cavity 1 and the semiconductor component 11, thereby making a semiconductor device thin for the upper insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
