THROUGH-SILICON-VIA (TSV) STRUCTURE AND ITS FABRICATING METHOD

摘要

A Through-Silicon-Via (TSV) structure and its fabricating method are provided. Said fabricating method comprises: providing a semiconductor substrate, which comprises an upper surface and a rear surface opposite to each other; forming an opening by etching the upper surface of the semiconductor substrate; forming the first nails by filling the opening with conductive materials; forming a groove by etching the rear surface of the semiconductor substrate, wherein the first nails are exposed from the bottom of the groove; forming the second nails by filling the groove with etchable conductive materials, and etching the etchable conductive materials, wherein the second nails connect with the first nails up and down; filling the gaps between the second nails and the semiconductor substrate and between the adjacent second nails with a dielectric layer. The present invention helps to improve the reliability of the TSV structure, and avoid void defects.