| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for impurity introduction by which an amorphous layer can be well formed on a surface of a substrate without fail, and a desired impurity can be introduced thereinto. <P>SOLUTION: The method for impurity introduction comprises: a first step which includes irradiating a surface of a monocrystalline silicon substrate with neon plasma to form an amorphous layer; and a second step which includes introducing an impurity into the amorphous layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
