| 摘要 |
A semiconductor memory device, having a memory array which has two memory banks which can be accessed simultaneously is provided. A word line selection circuit selects the word line according to the row address information, and a controller controls the word line selection circuit according to the received instruction. The controller performs the first read operation of the word line selection circuit in response to a first read command, and performs the second read operation of the word line selection circuit in response to a second read command. The first read operation selects the n-th word line of one of the memory banks and selects the (n+1)-th or (n−1)-th word line of the other memory bank, and the second read operation selects the n-th word line of one of the memory banks and selects the n-th word line of the other memory bank.
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